weitron http://www .weitron.com.tw WTX1012 device marking WTX1012 = a n-channel enhancement mode power mosfet sc-89 1 2 3 l e a d( p b)- f r ee p b 1/6 31-mar-09 features: * power mosfet : 1.8v rated * gate-source esd protected: 2000 v * high-side switching * low on-resistance: 0.7 * low threshold: 0.8 v (typ) * fast switching speed: 10 ns benefits: * ease in driving switches * low-voltage operation * high-speed circuits * low battery voltage operation applications: * drivers: relays, solenoids, lamps, hammers,displays, memories * battery operated systems * power supply converter circuits * load/power switching cell phones, pagers abso l u t e m axi m u m r a ti n gs ( t a = 2 5 c u n l es s ot h e r wis e n ote d ) parameter symbol 5 s ec s steady state unit drain-sourc e v oltage v d s 20 v g a t e - s ou r c e v oltage v g s 6 v c o n t inuo u s dra i n cur r e n t (t j = 1 5 0 c) b t a = 2 5 c i d 600 500 c o n t i n u o u s d r a i n c u r r e n t (t j = 1 5 0 c) b t a = 8 5 c i d 400 350 ma p u l s e d d r a i n c u r r e n t a i d m 1000 ma c o n t inuo u s s our c e curr e n t (dio d e c on d u c t i o n ) b i s 275 250 maxim u m p ow e r d i s si p a t i o n b f o r s c 7 5 t a = 2 5 c 175 150 maxim u m p ow e r d i s si p a t i o n b f o r s c - 7 5 t a = 8 5 c p d 90 80 mw maxim u m p ow e r d i s si p a t i o n b f o r s c 8 9 t a = 2 5 c p d 275 250 mw maxim u m p ow e r d i s si p a t i o n b f o r s c - 8 9 t a = 8 5 c 160 140 o p e r a t i n g j u n c t i o n a n d s t or a g e t emp e r a t u r e r a n g e t j , t s t g ? 5 5 t o 1 5 0 c g a t e - s ou r c e e s d r a t i n g ( h b m , m e t h o d 3 0 1 5 ) esd 2000 v notes d . p u l s e w i d t h li m i t e d b y m a x im u m ju n c t i o n t empe r a t u r e . e . s u r f a c e mo u n t e d o n f r 4 b o a r d . ( t op v iew) drain gate 3 1 2 source
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w WTX1012 electrical characteristics (t a =25c unless otherwise noted) 2/6 31-mar-09 parameter symbol t es t condition min t yp max unit static g a t e t h r e s hol d v oltage v g s ( t h ) v d s = v g s , i d = 25 0 a 0.45 0.9 v g a t e - b o d y le a k a g e i g s s v d s = 0 v , v g s = 4.5 v 0.5 1.0 a z e r o g a t e v ol t age drain curre n t i d s s v d s = 2 0 v , v g s = 0 v 0.3 100 na z ero g a t e v ol t age drain curre n t i d s s v d s = 2 0 v , v g s = 0 v , t j = 8 5 c 5 a o n- st a t e drain curre n t 1 i d ( o n ) v d s = 5 v , v g s = 4 . 5 v 700 ma v g s = 4 . 5 v , i d = 600 m a 0.41 0.70 d r ai n - s o u r c e o n - s t a t e r e s i s t a n c e a r d s ( o n ) v g s = 2 . 5 v , i d = 500 m a 0.53 0.85 d s ( o n ) v g s = 1 . 8 v , i d = 350 m a 0.70 1.25 f orward t ransconductance a g f s v d s = 1 0 v , i d = 400 m a 1.0 s diode f orwar d v oltage a v s d i s = 15 0 m a , v g s = 0 v 0.8 1.2 v dynamic 2 t o t al g a t e char g e q g 750 g a t e - s o u r c e ch a r g e q g s v d s = 10 v , v g s = 4 . 5 v , i d = 25 0 m a 75 pc g a t e - d r ai n ch a r g e q g d 225 t urn- o n delay t ime t d ( o n ) 5 ri s e t i m e t r v d d = 10 v , r l = 4 7 5 ns t urn- o f f dela y t i m e t d ( o f f ) v d d = 10 v , r l = 4 7 i d 200 m a, v g e n = 4 . 5 v , r g = 1 0 25 ns f all t ime t f 1 1 notes 1 . p ulse t e st; pulse wid t h 3 0 0 s , d u t y cy c l e 2%. 2 . g uaran t eed by design , no t subjec t t o produc t ion t e st in g . s t ress e s be y ond t ho s e lis t ed under ? a bsolu t e maximum ra t ings? may c ause permanen t damage t o t he device . t hese are s t res s ra t i n g s on l y , an d f u n c t iona l op e r a t i o n o f t he de v ice a t t hese or any o t her condi t ions beyond t hose indica t ed in t he opera t ional se ct ions o f t he speci f ica t ions is no t implied . e xpo s ure t o absolu t e ma x im u m r a t i n g cond i t ion s f or ex t ended period s may a ff ec t device reliabili t y .
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w WTX1012 3/6 31-mar-09 characteristics curve 0 200 400 600 800 1000 1200 0. 0 0. 5 1. 0 1. 5 2. 0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3.0 v g s = 5 t hru 1 . 8 v t c = ? 5 5 c 125 c 25 c s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s ? drain- t o- s ource v ol t age ( v ) ? drain curren t ( a ) i d v g s ? g a t e - t o - s o u r c e v o l t ag e ( v ) 1 v i d - drain curren t (m a ) ? o n-resis t an c e ( r ds(on) ) 0 20 40 60 80 100 0 4 8 1 2 1 6 20 0.0 0.8 1.6 2.4 3.2 4.0 0 20 0 40 0 60 0 80 0 1000 v d s ? drain- t o- s our c e v ol t age ( v ) c r s s c o s s c i s s i d ? drain curren t (m a ) v g s = 1 . 8 v fig.3 on-resistance vs. drain current c ? capa c i t ance (p f ) fig.4 capacitance v g s = 4 . 5 v v g s = 2 . 5 v r d s ( o n ) ? o n-resiis t an c e (normalized) 0.60 0.80 1.00 1.20 1.40 1.60 ? 50 ? 2 5 0 2 5 5 0 7 5 10 0 125 0 1 2 3 4 5 0. 0 0. 2 0. 4 0. 6 0.8 v d s = 10 v i d = 250 m a v g s = 4 . 5 v i d = 600 m a fig.5 gate charge ? g a t e - t o- s ource v o l t age ( v ) q g ? t o t a l g a t e charg e (n c ) v gs fig.6 on-resistance vs. junction t emperature t j ? j un c t io n t e mper a t ur e ( c) v g s = 1 . 8 v i d = 350 m a fig.1 fig.2
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 4/6 31-mar-09 characteristics curve WTX1012 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1.4 0 1 2 3 4 5 0 1 2 3 4 5 6 i d = 350 m a 1000 1 e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s ? o n-re s i st an c e ( r ds(on) ) v s d ? v ) v ( e g a t l o v n i a r d - o t - e c r u o s g s ? g a t e - t o - s ourc e v o l t ag e ( v ) ? s our c e curren t (m a ) i s i d = 200 m a t j = 1 2 5 c t j = 2 5 c t j = ? 5 5 c 10 100 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 0.3 ? 50 ? 2 5 0 2 5 5 0 7 5 10 0 125 i d = 0 . 25 m a fig.9 threshol d v oltage v ariance vs. t emperature v arianc e ( v ) v gs(th) t j ? t emper a t ure ( c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? 50 ? 2 5 0 2 5 5 0 7 5 10 0 125 fig.10 i g s s vs. t emperature t j ? t emper a t ure ( c) i g s s ? ( a) v g s = 4 . 5 v 0 1 2 3 4 5 6 7 ? 50 ? 2 5 0 2 5 5 0 7 5 10 0 125 fig.11 bv g s s vs. t emperature t ? t emper a t ure ( c) bv g s s ? g a t e - t o - s o u r c e b r e a k dow n v o l t ag e ( v ) fig.7 fig.8
characteristic curves 5/6 31-mar-09 weitron http://www.weitron.com.tw WTX1012 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 singl e puls e duty cycle = 0. 5 fig.12 normalize d thermal t ransient impedance, junction-to-ambient (sc-75a) s quar e w ave pulse duration (sec ) normalized e f fective t ransient thermal impedanc e 1 . duty cycle, d = 2. per unit base = r t h j a = 833 c/w 3. t j m ? t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 10 ? 3 10 ? 2 1 1 0 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 singl e puls e duty cycle = 0. 5 fig.13 normalize d thermal t ransient impedance, junction-to-foot s quar e w a v e pulse duration (sec ) normalized e f fect i ve t ransien t thermal impedanc e
u nit:mm sc-89 outline demensions a 1 2 3 b g d j n m k c t o p v i e w s dim a b c d g j k m m i n 1 . 5 0 0 . 7 5 0 . 6 0 0 . 2 3 nom 1.60 0.85 0.70 0.28 max 1.70 0.95 0.80 0.33 sc-89 0.50bsc 0.10 0.15 0.20 0.30 1.50 0.40 0.50 --- --- --- --- 10 10 n s 1.60 1.70 WTX1012 w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w 6/6 31-mar-09
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